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cf4 analysis for Very High Voltages

cf4 analysis for Very High Voltages

High voltage with a frequency of 9 kHz (Logy Electric Co., Tokyo, Japan, LTD., LHV-10AC, maximal peak-to-peak voltage (V pp) was 10 kV) was supplied to the upper electrode. Discharge voltage and current were observed with a high-voltage probe and a Rogowski coil, respectively.

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  • Research on CF4 Gas Molecular Simulation of High

    The research results of this paper form the sample database of CF4 gas concentration to some certain extent, and put forward the CF4 gas molecular simulation of high-voltage combinations based on the large data analysis and mining technology of MATLAB, which provides theoretical and practical basis for the operation and maintenance of high

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  • Analysis of a Capacitively Coupled Dual-Frequency

    of the dielectrics, where high ion energies are required and consequently high bias voltages have to be applied. The continuous shrinking of device dimensions requires further optimization of plasma sources.1) Discharges in carbon tetrafluoride (CF 4) and its mixtures with other gases—being of primary importance in the

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  • PAPER OPEN ACCESS

    Therefore, the concentration of CF4 gas in the high-voltage switch state can be effectively determined by detecting high-voltage GIS.This paper puts forward a kind of semiconductor laser based gas detection (NDIR) technology, the flange fixed installation in high voltageAuthor: Yongtao Chen, Shiling Zhang, Qiang Yao

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  • Carbon tetrafluoride | CF4 - PubChem

    Exposure to very high levels could cause death. Data on the potential for tetrafluoromethane to produce other toxic effects in humans were not available. Data on the potential for tetrafluoromethane to cause cancer, birth defects or reproductive effects in laboratory animals were not available.

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  • Impact of CF4 plasma treatment on threshold voltage and

    The shift of the threshold voltage Vth in Al2O3/InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) is demonstrated by CF4 plasma treatments.

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  • Experimental study on the formation of higher

    Oct 01, 2014This work presents the study of the synthesis of higher fluorocarbons from tetrafluoromethane (CF 4) with a plasma process based on the generation of a tip–tip electrical discharge at very high pressure.A series of experiments were performed using a He/CF 4 mixture with a ratio 60/40% at a pressure of 2 MPa to

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  • US5202291A - High CF4 flow-reactive ion etch for

    An anisotropic reactive ion etching of an aluminum metal film of a semiconductor device. The device is placed in a reactive ion etcher using a CF 4 , Cl 2 and BCl 3 gas mixture to anisotropically etch the aluminum metal film layer wherein the gas mixture has a ratio of CF 4 :Cl 2 such that the aluminum etch rate increases as the amount of CF 4

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  • Chemistry of titanium dry etching in fluorinated and

    in CF4 plasma. Fig. 3. Surface composition obtained by means of XPS quantitative analysis for samples treated in CF4-02 plasmas by varying the feed composition. (Fig, 2); the two maxima are not shifted as found in the same gas mixture for silicon (ref. 4) and tungsten (ref. 5).

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  • Novel Method of Improving Electrical Properties of

    3.2.1. Analysis of C−V Characteristics As expected, the control samples with PECVD gate oxide only are characterized by very high shift of C−V curves towards negative voltages. C−V characteristics of these samples exhibit also a strong frequency dependence in the strong inversion region – see Fig. 3(a). Fig. 3.

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  • PLASMA RIE ETCHING FUNDAMENTALS AND

    Describes how the breakdown voltage depends on electrode separation and the pressure based on ideal gas law. a (p.d) V ×(p ) V ln(p.d) b = + V: Voltage 600 800 V: Voltage p: Pressure d: gap distance a b: constants

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  • High Voltage Engineering Research Papers - Academia.edu

    High Voltage / Extra High Voltage over-head lines performance to the lightning strikes can be determined by using lightning strike to ground density level. Thus, an evaluation of the High Voltage / Extra High Voltage over-head lines performance calculation can be accurately done using the density of lightning strike to ground

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  • FACTORS AFFECTING PFC EMISSIONS FROM

    An analysis of the impact of AE voltage on sides of anodes during AEs due to the high resistance of the gas film completely wetting the bottom of anodes. The gas film at the Prebake anodes do not have to be lowered very far to make contact with the highly unstable aluminum metal pad in order to kill AEs. Also, cells that operate

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  • Electron attachment, effective ionization coefficient,

    several different high voltages using an 55Fe source. If the signal size observed with the 55Fe source is not 200 (= 5.9 keV/30 eV per ion pair) times that from a single photoelectron ejected by a laser pulse, then attachment

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  • First test of a Micromegas TPC in a magnetic field

    Very steady data taking conditions, with mesh currents below 0.3 nA and essentially no sparking. Trigger rate 2.5 Hz. DAQ rate 0.1 Hz. Display and reconstruction using Java code from Dean Karlen, adapted by Mike Ronan. Java-based analysis (JAS3 and AIDA) Vienna, Feb. 17, 2004 P. Colas - Micromegas TPC 5

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  • Sleyman Sungur TEZCAN | Gazi University -

    An experimental system is used to measure the breakdown voltages of CF4 gas mixtures for different electrode separation between 1 mm and 5mm. By comparing the measured breakdown voltages of CF4+SF6 and CF4+Argon gas mixtures with the corresponding values in the literature, the measurement method and

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  • Analysis of the insulation characteristics of CF3I

    Sulfur hexafluoride (SF6), which is the preferred gas for use in gas-insulated switchgear (circuit breakers, disconnect switches, etc. for high-voltage electrical circuits), has a very high global

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  • High Voltage Normally-off GaN MOSC- HEMTs on

    High Voltage Normally-off GaN MOSC-HEMTs on Silicon Substrates for Power Switching Applications GaN has been very attractive for power switching (CF4 Treated) -0.4-0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 100 200 300 400 500 600 700 800 900 mm) V D (V) ID IG • Devices fabricated on the thick GaN epi (epi B) without CF 4

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  • Prediction of the dielectric strength for c-C4F8

    The sparkover voltage of c-C 4F 8 is about 1.3 times that of SF 6 at atmospheric pressure for an ac waveform, and the lightning impulse voltage is 1.3–1.4 times that of SF 6 [32]. The critical reduced electric field strength (E/N) cr, where E and N represent the electric field and the particle number density respectively, was

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  • The Effect of High Temperature Annealing on

    Keywords—capacitance-voltage characteristics, current-voltage characteristics, fluorine plasma, high temperature annealing process, radio frequency reactive ion etching. 1. Introduction A key issue of ultra-large-scale-intergation technology (ULSI) is the quality of thin silicon dioxide layer used in the devices.

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  • gaseous dielectrics (CF4, SF6) by non-equilibrium

    Fluorinated monomers such as sulfur hexafluoride SF6 and carbon tetrafluoride CF4 are widely used, at low gas pressuns in plasma etching of silicon and insulating substates for microelectronic applications, and at high pressures in high voltage insulation systems. ‘Lhis paper reports on the decomposition of SFg.

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  • Angular dependences of SiO2 etch rates at different bias

    Sep 01, 2017Therefore, at a bias voltage of − 400 V, physical sputtering is a major contributor to the SiO 2 etching while it does not play an important role for a C 4 F 8 plasma. However, at a bias voltage of − 1200 V, physical sputtering is a major contributor in all the fluorocarbon plasmas used in this study. This is because the bias voltage (thus ion energy) is so high

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  • World leaders in SF6 Analysis and Handling Products

    time (SO2, HF, CF4, CO, H2S, Dewpoint and SF6 Purity) and data logging more than 1000 sample results, the Asserolyz-IR provides the most comprehensive analysis of any analyser available in the industry. Features The most advanced multi-parameter, infra red SF6 gas analyser delivering high

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  • Electron-impact dissociative ionization of

    Electron-impact dissociative ionization of fluoromethanes CHF3 and CF4 2425 spread, the AP measurements were conducted at only 1 µA electron intensity, with an energy accuracy estimated to be ±0.5eV. Reference and target gases were mixed in an external stainless steel cylinder and their

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  • Insulation and Molecular Properties of Alternative Gases

    Oct 21, 2018Abstract: SF 6 is a dielectric gas with high dielectric strength which is used in high voltage applications related to power equipment technology. However, its global warming potential (GWP) index and staying time in the atmosphere are very high. In this study, SF6 and its alternatives (tetrafluoromethane (CF4), methane

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  • Dissociation of SF6, CF4, and SiF4 by electron impact

    metric analysis indicated an approximate purity of 99 percent with small amounts of ffuorocarbons as impurities. It was used without further purifi cation. The CF4 was obtained from the Jackson laboratory, E. I. du Pont de Nemours Co., and used without further purification. Mass spectro metric analysis showed a total impurity

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  • Reducing Greenhouse Gas Emission from the

    of the high theoretical voltages making it unlikely to happen. The formation of CO at 1.3 V is thermodynami-cally the first enabled reaction, followed by CO 2 at just about 0.16 V higher. Looking at the thermoneutral voltage, the formation of CO 2 reaches the thermodynamic equilib-rium at the voltage of 2.11 V, while during a

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  • Chemical model for wire chamber aging in

    were taken with a beam voltage of 10 kV and are at 1400 X magnification. Because the AES analysis depth is only - 1 run, argon-ion-beam sputtering of the surface was used to obtain composition-depth profiles.23 III. DEPOSITION AND ETCHING IN CP4/iC4H10 MIXTURES A simple model to explain the ability of CF4/ic4H1e

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  • Coatings | Free Full-Text | Etching Characteristics of

    High voltage with a frequency of 9 kHz (Logy Electric Co., Tokyo, Japan, LTD., LHV-10AC, maximal peak-to-peak voltage (V pp) was 10 kV) was supplied to the upper electrode. Discharge voltage and current were observed with a high-voltage probe and a Rogowski coil, respectively.

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  • Ben Schelen - CEO - Abstract | LinkedIn

    Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2 mm3/min. The role of O2 and CF4 in etching molding compound is described. Plastic package with 38 um Cu bond wires and a 2 mm * 3.5 mm die inside is fully decapsulated in 20 minutes.Title: CEO at Abstract

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  • Photoresist stripping and descum, organic contamination

    Oxygen radicals can then oxidize the photoresist and generate high vapor pressure by-products CO, CO2 and H2O. Adding small amount of CF4 or SF6 gas can significantly increase the photoresist etching rate because highly reactive fluorine atoms can boost the rate of extracting hydrogen from the photoresist polymer.

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  • Alstom High Voltage Training Offer - Technical Institute

    Mar 19, 2014Handling of SF6 and CF4 gases according to IEC/TR Prerequisites Any high voltage training Duration 3.5 days Audience 6 4 6 6 ! #$ % ()*+,+! Learning path Legal constraints . * / Practical part (modules B and C) 0 1 2 0 3 6 4 4 * 1 1 Theoretical part (modules A, B and C) $ 6* 4 4 - 6 4 $ 1 / 1 5 1 6 4 Note: A

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  • CF4 Decomposition Using Low-Pressure Pulse

    of 25kHz to 99kHz. The analysis of the by-product of CF 4 decomposition was carried out using a CO 2 gas analyzer and a Fourier transform infrared spectrophotometer (FTIR) with a pulse modulation frequency of 75kHz. It was known that 10%, 50% and 24% of CF 4 are converted to CO, CO 2 and COF 2,

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  • Measurement of electron temperatures and

    T e high represents electron energies in the high energy portion of the EEDF, ϳ15-40 eV. T e high and T e were combined to obtain approximate EEDF for CF 4 / O 2 plasmas in 2f-CCP. Figure 10 shows T e high and T e as a function of pressure for a 80% CF 4 +20% O 2 plasma with 500 W top rf power and no bottom rf power.

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  • Resistance Switching in Ni/HfOx/Ni Nonvolatile

    Resistance Switching in Ni/HfO x/Ni Nonvolatile Memory Device with CF4/O2 Plasma Post-treatment Chiung-Hui Lai;, Te-Shun Chang, Wen-Hsien Tzeng1, and Kow-Ming Chang1 2 Department of Electronics Engineering, Chung Hua University, Hsinchu 300, Taiwan, R.O.C. 1Institute of Electronics, National Chiao Tung University,

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  • Preliminary Study of Brain Glucose Metabolism Changes

    Feb 05, 2015I NTRODUCTION. Lung cancer is one of the most common malignant tumors, and the patients with lung cancer usually have a high rate of depression because of various factors.[1,2,3,4] Studies of cerebral glucose metabolism changes in patients with malignant tumors detected by brain positron emission tomography

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  • Anisotropic Reactive Ion Etching of Submicron W

    Anisotropie RIE etching of Tungsten (W) in a low voltage CF 4 or SF 6 plasma while achieving features as small as 0.50 μm is demonstrated using Titanium (Ti) as an etch mask. For reasons of reliability and tolerance to high temperature processing techniques, W can be a desirable contact metal in microelectronics fabrication.

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  • World leaders in SF6, Oil Analysis and Handling

    voltage breakers. With enough gas storage for up to 5 normal sampling cycles, the unit enables checks on repeatability and performance Up to 11 Gases - User-Selectable multi sensor Hi/Lo ppm technology. SF6 Purity, Dew Point, S02 (low/high range), HF, CF4 (low/high range), Air, C0, H2S, R12 (push gas)

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  • Lecture 7 Neutron Detection - MIT OpenCourseWare

    high count rate applications 1012 1010 108 106 104 102 0 500 1000 Pulse Height (Arbitrary Units) Applied Voltage Geiger-Muller Region Proportional Region Ionization Chamber Region Recombination Region Cathode Cathode Anode Wire UV Ph ot n U V P h o t o n Individual avalanches e Images by MIT OpenCourseWare.

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  • US3400024A - Inhibiting ozone decomposition with sf6 gas

    US3400024A US53487855A US3400024A US 3400024 A US3400024 A US 3400024A US 53487855 A US53487855 A US 53487855A US 3400024 A US3400024 A US 3400024A Authority US United States Prior art keywords ozone oxygen decomposition spark volume Prior art date 1955-09-15 Legal status (The

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  • Time-resolved measurements of ion energy

    in CF4:Ar mixtures. It is shown for pulsed plasmas contain-ing CF4 that time-resolved mass analysis of ion flux is es-sential since the relative abundance of ionic species varies strongly with time. Time-resolved measurements of optical emission and electrical characteristics are also presented. a)Electronic mail:

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  • Neutron Detector development at the ILL

    - Very high counting rate - Limited sensitive area (20 cm x 20 cm) 3 mm Status Al coating degrades rapidly with CF4 under irradiation use other gases like Ar-CO2 Pb: requires 2 times more pressure 3He Detectors, example 8: Charge division MSGC

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  • Proceedings of the 21st International Symposium on High

    The 21st International Symposium on High Voltage Engineering, organized by the 90 years old Budapest School of High Voltage Engineering, provides an excellent forum to present results, advances and discussions among engineers, researchers and scientists, and share ideas, knowledge and expertise on high voltage engineering.

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  • A Photoelectron Spectroscopy Study of CF4/H2

    However, it is expected that the silicide will be etched very slowly in CF4H2. Etch rate measurements made in a labo- ratory plasma etching system in our laboratory shows that the etch rate of tantalum silicide is very much smaller than silicon dioxide at 50 millitorr and at equivalent fiow and bias voltage settings.

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  • A Phenomenological Model Describing the Timing

    Recent Developments in High Energy Physics and Cosmology. Paraschou Konstantinos - HEP2018 2 1) PICOSEC: Charged particle timing at sub-25 picosecond precision with a Micromegas based Analysis Methods and Results of the Picosecond-Micromegas Laser Beam Data: PART A – Charge COMPASS CF4 Anode Voltage: 600 V 625 V 650 V Anode Voltage

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  • Journal of The Electrochemical Society, H561 0013

    investigated. Among these high-k gate materials, HfO 2 gate dielectrics6-8 are the most popular candidate currently under study, due to their high dielectric constant 25–30, wide energy bandgap 5.68 eV , and the high stability of their Si surface. At the mo-ment, capacitance-voltage C-V hysteresis and charge trapping

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  • Implementation Of Treatment Recovery Of the SF6

    The High Voltage electrical industry uses SF 6 gas because it is an excellent dielectric, which in addition has very good electrical arc switching characteristics. The gas is chemically inert, non-toxic, and non-flammable. However, the SF 6 gas due to its high Global Warming Potential (GWP), has been

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  • Research Progress on Synergistic Effect between

    Jun 11, 2019Breakdown voltage of c-C4F8 gas mixtures for various electrode gaps. (a) c-C4F8/CF4, (b) c-C4F8/CHF3, (c) c-C4F8/1,1,1-CH3CF3. It can be seen from the figure that the addition of a small amount of c-C 4 F 8 can greatly improve the insulation strength of gas mixture. Mixing 20% c-C 4 F 8 in CHF 3 can double the breakdown voltage.

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