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cf4 Analysis for high voltages

cf4 Analysis for high voltages

Therefore, the pH sensitivity can be increased up to 60.8 mV/pH. In addition, the hysteresis voltage can be improved down to 2.1 mV, and the drift voltage can be suppressed to as low as 0.23 mV/h. IGO-based membranes are promising for future high-sensitivity and -stability devices integrated with optical applications.

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  • Research on CF4 Gas Molecular Simulation of High

    The research results of this paper form the sample database of CF4 gas concentration to some certain extent, and put forward the CF4 gas molecular simulation of high-voltage combinations based on the large data analysis and mining technology of MATLAB, which provides theoretical and practical basis for the operation and maintenance of high-voltage

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  • New Algorithm for Calculating CF4 Emissions from High

    Feb 02, 2018Detailed analysis of PFC measurements made over the past decade has shown conclusively that CF 4 emission rates decrease rapidly with increasing reported anode effect duration. Average duration or average overvoltage can be skewed by changes in the mix of anode effect durations, particularly the mix ofCited by: 2

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  • Analysis of a Capacitively Coupled Dual-Frequency

    high frequency source, f HF, is chosen to be either 13.56 or 100MHz, while for the low frequency, f LF, 0.7–1.0MHz is used (the high and low frequencies are always chosen to be integer multiples of each other). V HF and V LF are the amplitudes of these driving voltages, respectively. The phases of the two driving signals are

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  • Impact of CF4 plasma treatment on threshold voltage and

    The shift of the threshold voltage Vth in Al2O3/InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) is demonstrated by CF4 plasma treatments.

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  • PAPER OPEN ACCESS

    Therefore, the concentration of CF4 gas in the high-voltage switch state can be effectively determined by detecting high-voltage GIS.This paper puts forward a kind of semiconductor laser based gas detection (NDIR) technology, the flange fixed installation in high voltageAuthor: Yongtao Chen, Shiling Zhang, Qiang Yao

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  • Carbon tetrafluoride | CF4 - PubChem

    High concentrations cause a deficiency of oxygen with the risk of unconsciousness or death. Check that oxygen content is at least 19% before entering storage or spill area. If in a building, evacuate building and confine vapors by closing doors and shutting down HVAC systems.

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  • High-voltage battery monitor circuit: ±20V, 0 10kHz,

    High-voltage battery monitor circuit: ±20V, 0–10kHz,18-bit fully differential Specifications Specification Calculated Simulated Measured Transient ADC Input Settling < 0.5LSB or 19µV 6.6µV N/A Noise 20.7µV rms 20.65µV rms 30.8µV rms Bandwidth 10.2kHz 10.4kHz 10.4kHz Design Notes 1.

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  • Effects of CF4 Plasma Treatment on pH and pNa

    The analysis of F 1s, Hf 4f, and O 1s spectra gives evidence that the enhancement of pNa sensitivity is due to the high concentration of incorporated fluorine in HfO2 films by CF4 plasma surface

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  • High Voltage Engineering Research Papers - Academia.edu

    High Voltage / Extra High Voltage over-head lines performance to the lightning strikes can be determined by using lightning strike to ground density level. Thus, an evaluation of the High Voltage / Extra High Voltage over-head lines performance calculation can be accurately done using the density of lightning strike to ground

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  • Chemistry of titanium dry etching in fluorinated and

    in CF4 plasma. Fig. 3. Surface composition obtained by means of XPS quantitative analysis for samples treated in CF4-02 plasmas by varying the feed composition. (Fig, 2); the two maxima are not shifted as found in the same gas mixture for silicon (ref. 4) and tungsten (ref. 5).

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  • Theoretical analysis of the synergism in the

    Larin et al [93] SF6/CF4 -theoretical analysis -J.Berg et al [94] Sulfur hexafluoride, SF6, is a common dielectric medium for high-voltage electrical equipment, but because it is a potent

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  • FACTORS AFFECTING PFC EMISSIONS FROM

    work provides further analysis of and conclusions from the data An analysis of the impact of AE voltage on PFC emission rate was made and compared with similar analyses from earlier laboratory studies (7-9). A detailed analysis of PFC CF4 C2F6 AE 1 (SWPB) 0 6 12 18 24 30 0 5 10 15 20 Overvoltage (v) CF4 Increasing CF4

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  • Analysis of a Capacitively Coupled Dual-Frequency CF4

    We present particle-in-cell simulations of capacitively-coupled CF4 RF discharges. For establishing the discharge plasma high frequency sources of either 13.56 or 100 MHz are used, while a low

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  • Striations in dual-frequency capacitively coupled

    Striations in dual-frequency capacitively coupled CF 4 plasmas: the role of the high- frequency voltage amplitude Yong-Xin Liu1, Zoltán Donkó2, Ihor Korolov3, Edmund Schngel4, You-Nian Wang1 and Julian Schulze3,5 1Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of

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  • Calculation of Electron Swarm Parameters in

    Do, A.T., 2016. Analysis of electron transport coefficients in binary mixtures of TEOS gas with Kr, Xe, He, and Ne gases for using in plasma assisted thin film deposition. Journal of Electrical Engineering and Technology, 11(2), pp.455-462. Duzkaya, H., and Tezcan, S.S., 2017. Measurement and calculation of breakdown voltage in CF4

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  • ON CALCULATION VOLTAGES OF MIXTURES

    Department of High Voltage Engineering C-C4F8, 2-C4F8, N2, C02, CF4, CHF3, and 1,1,1-CH3CF3 gases on the basis of the NKH formula Vmix=k(pd) analysis of the breakdown voltages of mixtures

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  • Etch characteristics of HfO2 thin films by using CF4/Ar

    Jul 01, 2013Abstract. In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity) of HfO 2 thin films in the CF 4 /Ar inductively coupled plasma (ICP). The maximum etch rate of 54.48 nm/min for HfO 2 thin films was obtained at CF 4 /Ar (=20:80%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as ICP RF power, DC-bias voltage…

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  • Prediction of the dielectric strength for c-C4F8

    The sparkover voltage of c-C 4F 8 is about 1.3 times that of SF 6 at atmospheric pressure for an ac waveform, and the lightning impulse voltage is 1.3–1.4 times that of SF 6 [32]. The critical reduced electric field strength (E/N) cr, where E and N represent the electric field and the particle number density respectively, was

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  • Sleyman Sungur TEZCAN | Gazi University -

    An experimental system is used to measure the breakdown voltages of CF4 gas mixtures for different electrode separation between 1 mm and 5mm. By comparing the measured breakdown voltages of CF4+SF6 and CF4+Argon gas mixtures with the corresponding values in the literature, the measurement method and

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  • Striations in dual-frequency capacitively coupled CF4

    Jul 25, 2019Striations in dual-frequency (DF, 8/40 MHz) capacitively coupled CF 4 plasmas have been investigated by phase resolved optical emission spectroscopy and via Particle-in-Cell/Monte Carlo collision simulations. The properties of striated structures of various plasma parameters in a DF discharge and the effect of the high-frequency voltageCited by: 1

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  • Optical detection of corona discharges in SF6, CF4, and

    The emission spectra resulting from corona discharges generated under dc and 50‐Hz ac voltages in SF 6, N 2, SOF 2, SO 2 F 2, S 2 F 10, CF 4, SO 2, and C 2 F 3 Cl 3, and mixtures of these gases with SF 6 were investigated in the 220–900‐nm wavelength range for gas pressures between 30 and 400 kPa. Characteristic emissions were ruled out only for N 2, SF 6, CF 4…

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  • Analysis of adsorption properties of SF6 decomposed

    Mar 01, 20201. Introduction. Due to excellent arc extinguishing and insulation properties as well as excellent stability, SF 6 is widely used as an insulating medium for high voltage electrical equipment , .Gas-insulated equipment (GIE) may have various defects during manufacture, installation or operation, which may cause

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  • HV Gas Insulated Circuit Breakers | Mitsubishi Electric

    To meet today’s crticial demands Mitsubishi Electric High Voltage Dead-Tank Power Circuit Breakers cover a range of 72.5kV to 800kV with interrupting classes spanning 40kA to 80kA. Beyond their primary function of protection, high voltage circuit breakers often are highly customized and engineered solutions.

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  • A review on SF6 substitute gases and research status of

    Nov 01, 2018The findings proved that the initial voltage in PD of the pure c-C4 F 8 is approximately 1.3 times higher than that of the pure SF 6 gas. c-C 4 F 8 has a synergistic effect with N 2, and the synergistic coefficient is approximately 0.45 (Weijun et al., 2011).

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  • gaseous dielectrics (CF4, SF6) by non-equilibrium

    Fluorinated monomers such as sulfur hexafluoride SF6 and carbon tetrafluoride CF4 are widely used, at low gas pressuns in plasma etching of silicon and insulating substates for microelectronic applications, and at high pressures in high voltage insulation systems. ‘Lhis paper reports on the decomposition of SFg.

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  • High Breakdown Voltage Enhancement-Mode MgxZn1

    Dec 05, 2019Reset your password. If you have a user account, you will need to reset your password the next time you login. You will only need to do this once.

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  • Angular dependences of SiO2 etch rates at different bias

    Sep 01, 2017When the bias voltage was as high as − 1200 V, the thicknesses of the steady-state fluorocarbon films were very thin (less than 2 Å) and nearly unchanged at all ion-incident angles for CF 4 and C 2 F 6 plasmas, resulting in nearly the same shape of the NEY curves.

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  • Coatings | Free Full-Text | Etching Characteristics of

    High voltage with a frequency of 9 kHz (Logy Electric Co., Tokyo, Japan, LTD., LHV-10AC, maximal peak-to-peak voltage (V pp) was 10 kV) was supplied to the upper electrode. Discharge voltage and current were observed with a high-voltage probe and a Rogowski coil, respectively.

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  • High-density plasma etching characteristics of indium

    May 29, 2015As CF4 concentration increased from 0% to 25%, the etch rate of the IGZO thin films reached the maximum value. In the case of CF 4 concentration values of above 25%, the etch rate of the IGZO thin films decreased because of the increased by-product deposition rate.

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  • 3333The spatial distribution of radicals in the dual

    profiles especially nearby the sheath at high 1.76 MHz power. Thus the F spatial density distributions weren’t used in the following analysis. The spatial distributions of CF2 and H mole fraction in Ar/CHF3 (70/30) and Ar/CF4 (70/30) at 45 mTorr are shown in Fig. 4a and 4b respectively. The values of CF2

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  • Publications | High Voltage Lab

    PEER-REVIEWED JOURNAL AND CONFERENCE PAPERS SINCE THE BEGINNING OF THE OPERATION OF THE HIGH-VOLTAGE LABORATORY IN 1994: S.S. Tezcan, M.S. Dincer, S. Bektas and H.R. Hiziroglu, “Boltzmann Analysis of Electron Swarm Parameters in Binary CF4 + Ar Mixtures”, accepted for publication in IEEE

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  • Detection of CF4 Gas Using a Nanomaterial-Based Gas

    Aug 26, 2019Abstract. Partial and arc discharge in gas insulated switchgear (GIS), such as a switching component or circuit breaker, can lead decomposition gas generation of sulphur hexafluoride (SF 6), which is generally used as an electrical insulation medium.The authors had demonstrated that SF 6 decomposition

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  • Ultrafast Infra Red SF6 Analysis – Zerowaste Rapide+

    Ultrafast Infra Red SF6 Analysis – Zerowaste Rapide+; Hose Vacuum Drying Function – Zerowaste Moisture Perfect • CF4 (0-3000ppm) • CF4 (0-70%) Asset Protection for the Electricity Supply Industry / Condition Monitoring for TD / Utility Predictive Maintenance / High Voltage SF6 Oil Testing / Gas Leak

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  • Assessment of electron swarm parameters and limiting

    The electron swarm parameters, namely electron drift velocity, mean energy, effective ionization coefficient and limiting values of number-density-reduced electric fields, E/N, are calculated and assessed in SF6+CF4+Ar ternary mixtures for SF6 concentrations that vary from 1% to 20% over a range of E/N from 50Td to

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  • LD16-04 - Process Sensing

    two Porapak Q type columns. The pre column is used to flush out the SF6 and the second column for separation of CF4 from other impurities. This channel can also allow the analysis of CO2 and SOF2. SF6 is used in the electrical industry as a gaseous dielectric medium for high-voltage circuit breakers, switchgear and

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  • Dissociation of SF6, CF4, and SiF4 by electron impact

    metric analysis indicated an approximate purity of 99 percent with small amounts of ffuorocarbons as impurities. It was used without further purifi cation. The CF4 was obtained from the Jackson laboratory, E. I. du Pont de Nemours Co., and used without further purification. Mass spectro metric analysis showed a total impurity

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  • World leaders in SF6, Oil Analysis and Handling

    voltage breakers. With enough gas storage for up to 5 normal sampling cycles, the unit enables checks on repeatability and performance Up to 11 Gases - User-Selectable multi sensor Hi/Lo ppm technology. SF6 Purity, Dew Point, S02 (low/high range), HF, CF4 (low/high range), Air, C0, H2S, R12 (push gas)

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  • World leaders in SF6 Analysis and Handling Products

    time (SO2, HF, CF4, CO, H2S, Dewpoint and SF6 Purity) and data logging more than 1000 sample results, the Asserolyz-IR provides the most comprehensive analysis of any analyser available in the industry. Features The most advanced multi-parameter, infra red SF6 gas analyser delivering high

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  • The Dry Etching of TiN Thin Films Using Inductively

    voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was

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  • Crystals | Free Full-Text | Effects of CF4 Plasma

    Therefore, the pH sensitivity can be increased up to 60.8 mV/pH. In addition, the hysteresis voltage can be improved down to 2.1 mV, and the drift voltage can be suppressed to as low as 0.23 mV/h. IGO-based membranes are promising for future high-sensitivity and -stability devices integrated with optical applications.

    Get Price
  • Breakdown characteristics of CF4 and CF4/N2 hybrid gas

    SST experimental analysis on the feasibility of c-C 4 F 8 /CF 4 substituting SF 6 as insulation medium [J]. Transactions of China Electrotechnical Society, 2008, 23(6): 14–18. (in Chinese) Google Scholar [12] ZHAO Hong, WU Bian-tao, XIAO Deng-ming. High Voltage Engineering, 2015, 41(5): 1446–1450. (in Chinese) Google Scholar

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  • Influence of Micro-oxygen on SF6 Decomposition

    Dec 05, 2016Introduction When SF6 with good electro-negativity serves as an insulating medium for high voltage equipment, the insulating strength can be improved greatly. SOF4, SO2, CF4, CO2, HF and H2S

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  • Electron attachment, effective ionization coefficient,

    several different high voltages using an 55Fe source. If the signal size observed with the 55Fe source is not 200 (= 5.9 keV/30 eV per ion pair) times that from a single photoelectron ejected by a laser pulse, then attachment

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  • Electron-impact dissociative ionization of

    Electron-impact dissociative ionization of fluoromethanes CHF3 and CF4 2425 spread, the AP measurements were conducted at only 1 µA electron intensity, with an energy accuracy estimated to be ±0.5eV. Reference and target gases were mixed in an external stainless steel cylinder and their

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  • Resistive Switching Characteristics of a SiOx Layer with

    Mar 11, 2014In Figure 3(a), the statistical analysis of the operating voltages of the two samples is shown.The magnitudes of the operating voltages of the CF 4-treated sample were smaller than those of the control sample.In addition, the CF 4-treated sample had smaller voltage dispersion than the control sample.This improvement in voltage

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  • Natural CF<subscr4</subscr and

    high voltage electrics and in metallurgy. Until recently it was generally assumed that both gases are of purely anthropogenic origin. Harnisch et al. [1996b] showed that probably half of the present atmospheric burden of CF4 is natural and that CF4 and SF 6 can be extracted from a Bavarian fluorite (CaF2) dubbed Stinkspat by local

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    High Potential Test Sets High Voltage Circuit Breaker and Substation Test Equipment Infrared Cameras Insulation Resistance / Megohmmeters Insulation Resistance/Megohmmeters Low and Medium Voltage Circuit Breaker and Switchgear Test Equipment Low Resistance Ohmmeters Meters and Meter Test Equipment

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  • US3400024A - Inhibiting ozone decomposition with sf6 gas

    US3400024A US53487855A US3400024A US 3400024 A US3400024 A US 3400024A US 53487855 A US53487855 A US 53487855A US 3400024 A US3400024 A US 3400024A Authority US United States Prior art keywords ozone oxygen decomposition spark volume Prior art date 1955-09-15 Legal status (The

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